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1 CGHV27030S 30 w, dc - 6.0 ghz, gan hemt t he cg hv27030s is an unm atched, gallium nitride (gan) high electron mobilit y tr ansistor (he mt) which off ers high effciency , high gain and wide bandwidth capabilities. the CGHV27030S gan hemt devices are ideal for telecommunications applications with frequencies of 700-960 mhz, 1200-140 0 mhz, 1800-2200 mhz, 2500-2700 mhz, and 3300-3700 mhz at both 50 v and 28 v oper ations. the CGHV27030S is also ideal for tactical communications applications oper ating from 20-2500 mhz, including land mobile r adios. additional applications include l -band radar and s-band radar. the CGHV27030S can oper ate with either a 50 v or 28 v r ail. the tr ansistor is a v ailable in a 3mm x 4mm, surface mount, dual-fat-no-lead (dfn) package. r e v 0. 2 C a p r il 2 0 1 4 features for 50 v in CGHV27030S-tb1 ? 2.5 - 2.7 ghz oper ation ? 30 w t ypical output p ower ? 21 db gain at 5 w p ave ? -36 dbc aclr at 5 w p a v e ? 32% effciency at 5 w p ave ? high degree of apd and dpd correction can be applied typical performance 2.5-2.7 ghz (t c = 25?c) , 50 v parameter 2.5 ghz 2.6 ghz 2.7 ghz units small signal gain 23.0 22.0 21.4 db adjacent channel p ower @ p out =5 w -34.5 -36.5 -37.0 dbc dr ain effciency @ p out = 5 w 29.5 31.5 32.9 % input r eturn loss 13.4 9.5 10.4 db note: measured in the CGHV27030S- tb1 application circuit, under 7.5 db p ar single carrier wcdma signal test model 1 with 64 dpch. listing of available hardware application circuits / demonstration circuits application circuit oper ating frequency amplifer class oper ating v oltage CGHV27030S- tb1 2.5 - 2.7 ghz class a/b 50 v CGHV27030S- tb2 2.5 - 2.7 ghz class a/b 28 v CGHV27030S- tb3 1.8 - 2.2 ghz class a/b 28 v CGHV27030S- tb4 1.8 - 2.2 ghz class a/b 50 v CGHV27030S-tb5 1.2 - 1.4 ghz class a/b 50 v package type: 3x4 dfn pn: CGHV27030S subject to change without notice. www.cree.com/rf http://
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units notes dr ain- source v oltage v d ss 125 v olts 25?c gate-to- source v oltage v gs -10, +2 v olts 25?c stor age t emper ature t s tg -65, +150 ?c oper ating junction t emper ature t j 225 ?c maximum f orw ard gate current i gmax 4 ma 25?c maximum dr ain current 1 i d max 1.5 a 25?c soldering t emper ature 2 t s 245 ?c case oper ating t emper ature 3 t c -40, +150 ?c thermal r esistance, junction to case 4 r jc 6.18 ?c/w 85?c note: 1 current limit for long term, reliable oper ation 2 r efer to the application note on soldering at www .cree.com/rf/document -libr ary 3 t c = case temper ature for the device. it refers to the temper ature at the ground tab underneath the package. the pcb will add additional thermal resistance. see also , the p ower dissipation de-r ating curv e on page 12. 4 measured for the CGHV27030S at p d is s = 12 w 5 the r th for cree s demonstr ation amplifer , CGHV27030S- tb1, with 33 x 0.011 via holes designed on a 20 mil thick r ogers 435 0 pcb , is 3.9c. the total r th from the heat sink to the junction is 6.18 c + 3.9c = 10.08c /w . electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold v oltage v gs(th) -3.8 -3.0 -2.3 v d c v d s = 10 v , i d = 4 ma gate quiescent v oltage v gs(q) C -2.7 C v d c v d s = 50 v , i d = 0.13 ma satur ated dr ain current i d s 3.0 3.6 C a v d s = 6.0 v , v gs = 2.0 v dr ain- source breakdown v oltage v (b r)ds s 150 C C v d c v gs = -8 v , i d = 4 ma rf characteristics 2,3 (t c = 25 ? c, f 0 = 2.7 ghz unless otherwise no ted) gain g C 20.7 - db v d d = 50 v , i d q = 0.13 a, p out = 37 dbm wcdma liner arit y 4 aclr C -37 C dbc v d d = 50 v , i d q = 0.13 a, p out = 37 dbm dr ain effciency 4 C 32.9 - % v d d = 50 v , i d q = 0.13 a, p out = 37 dbm output mismatch stress vswr - 10 : 1 - y no damage at all phase angles, v d d = 50 v , i d q = 0.13 a, p out = 37 dbm dynamic characteristic s input capacitance 5 c gs C 5.38 C pf v d s = 50 v , v gs = -8 v , f = 1 mhz output capacitance 5 c d s C 1.18 C pf v d s = 50 v , v gs = -8 v , f = 1 mhz f eedback capacitance c gd C 0.12 C pf v d s = 50 v , v gs = -8 v , f = 1 mhz notes: 1 measured on w afer prior to packaging 2 scaled from pcm data 3 measured in cree s production test fxture. this fxture is designed for high v olume test at 2.7 ghz 4 single carrier wcdma, 3gpp t est model 1, 64 dpch, 45% clipping, p ar = 7.5 db @ 0.01% probabilit y on ccdf 5 includes package parasitics. CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance in application circuit CGHV27030S-tb1 figure 1. - small signal gain and return losses vs frequency v dd = 50 v, i dq = 0.13 a figure 2. - typical drain effciency and aclr vs. output power v dd = 50 v, i dq = 0.13 a, 1c wcdma, par = 7. 5 db 20.0 25.0 30. 0 35. 0 40. 0 45. 0 - 25 -20 - 15 - 10 -5 0 effi c i e n c y ( % ) a c l r ( d b c ) t y pic a l d r a in e f f ic ie nc y a nd a c lr v s . out put p ow e r o f cg hv 2 7030s measu red i n cg hv 2 7030s - t b vdd=50 v,idq=0.13 a, 1c wcdm, par=7.5 db aclr_2p5 aclr_2p6 aclr_2p7 eff_2p5 eff_2p6 eff_2p7 0.0 5 .0 10. 0 15. 0 20.0 - 45 -40 - 35 - 30 - 25 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 effi c i e n c y ( % ) a c l r ( d b c ) pout (dbm) 0 5 10 15 20 25 30 g a i n ( d b ) i n p u t a n d o u t p u t r e t u r n l o s s s mal l s i g n al g ai n an d r et u r n l o sses v s. f r eq u en cy f o r c g h v 27030s measu r ed i n a p p l i cat i o n c i r cu i t c g h v 27030s - t b vdd=50 v, idq=0.13 a -25 -2 0 -1 5 -1 0 -5 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 g a i n ( d b ) i n p u t a n d o u t p u t r e t u r n l o s s frequency (mhz) s11 s21 s22 aclr effciency CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance in application circuit CGHV27030S-tb1 figure 3. - typical gain, drain effciency and aclr vs frequency v dd = 50 v , i dq = 0.13 a, p ave = 5 w, 1c wcdma, par = 7.5 db gain dr ain effciency aclr -30.0 - 27. 5 - 25. 0 - 22. 5 - 20. 0 20 25 30 35 40 a c l r ( d b c ) g a i n ( d b ) & d r a i n ef f i c i e n c y ( % ) ty pic a l g a in, d r a in e f f ic inc y a nd a c lr v s fr e que nc y c g h v 27030s measu r ed i n a p p l i cat i o n c i r cu i t c g h v 27030s - t b vdd=50 v, idq-0.13,pave=5w,1cwcdma, par=7.5 db -40.0 - 37. 5 - 35. 0 - 32. 5 0 5 10 15 2. 45 2. 50 2. 55 2. 60 2. 65 2. 70 2. 75 a c l r ( d b c ) g a i n ( d b ) & d r a i n ef f i c i e n c y ( % ) frequency (ghz) gain eff aclr dr ain effciency gain aclr CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 source and load impedances for application circuit CGHV27030S-tb1 frequency (mhz) z source z load 2500 2.2 - j0.7 10.9 + j15.7 2600 2.8 - j1.1 11.5 + j16.7 2700 2.5 - j1.7 12.1+j17.7 note 1 : v dd = 50 v, i dq = 0.13 a in the dfn package. note 2 : impedances are e xtr acted from the CGHV27030S- tb1 application circuit and are not source and load pull data deriv ed from the tr ansistor . CGHV27030S-tb1 bill of materials designator description qty r1, r2 res , 22.6, ohm, +/-1%, 1/16w , 0603 2 c1 cap , 3.3 pf , 0.1 pf , 0603, a t c 1 c2, c3, c4 cap , 0.7 pf , 0.05 pf , 0603, a t c 3 c5, c11, c15 cap , 8.2 pf , 0.25 pf , 0603, a t c 3 c6, c16 cap , 470 pf , 5%, 100 v , 0603 2 c7, c17 cap , 33000 pf , 0805, 100 v , 0603, x7r 2 c18 cap , 1.0 uf , 100 v , 10%, x7r, 1210 1 c8 cap , 10 uf 16 v t ant alum 1 c19 cap , 33 uf , 20%, g ca se 1 j1, j2 conn, sma, p anel mount j ack, flange, 4-hole, blunt post 2 j3 header r t>plz .1cen lk 5 pos 1 pcb pcb , rogers 4350, er 3.66 1 q1 CGHV27030S , qfn 1 d z source z load g s CGHV27030S -tb1 application circuit CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 CGHV27030S-tb1 application circuit schematic, 50 v CGHV27030S-tb1 application circuit outline, 50 v CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 electrical characteristics when tested in CGHV27030S-tb2, 28 v, 2.5 - 2.7 ghz ? parameter 2.5 ghz 2.6 ghz 2.7 ghz units small signal gain 15.5 15.7 16.0 db adjacent channel p ower @ p out =3.2 w -42.0 -41.7 -41.2 dbc dr ain effciency @ p out = 3.2 w 33.5 34.2 34.1 % input r eturn loss -9.0 -8.8 -10.2 db note: measured in the CGHV27030S- tb2 application circuit.under 7.5 db p ar single carrier wcdma signal test mode figure 4. - small signal gain and return losses vs frequency v dd = 28 v, i dq = 0.13 a 0 5 10 15 20 25 30 g a i n ( d b ) i n p u t a n d o u t p u t r e t u r n l o s s s mal l s i g n al an d ret u rn l o sses v s. f req u en cy cg hv 2 7030s measu red i n a d- 03- 00 03 08 ( a p p l i cat i o n ci rcu i t o p t i mz i ed f o r 28 v p erf o man ce) vdd=28 v, idq=0.13 -30 - 25 - 20 - 15 - 10 -5 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 g a i n ( d b ) i n p u t a n d o u t p u t r e t u r n l o s s frequency (mhz) s11 s21 s22 CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 typical performance in application circuit CGHV27030S-tb2 figure 5. - typical drain effciency and aclr vs. output power v dd = 28 v, i dq = 0.13 a, 1c wcdma, par = 7.5 db figure 6. - typical gain, drain effciency and aclr vs frequency v dd = 28 v, i dq = 0.13 a, p ave = 3.2 w, 1c wcd ma, par = 7.5 db -35.00 - 32. 50 - 30. 00 - 27. 50 - 25. 00 20 25 30 35 40 a c l r ( d b c ) g a i n ( d b ) , d r a i n effi c i e n c y ( % ) t y p ic al dr ai n e f f ic ie n cy an d a cl r v s. f r eq u en cy cg hv 27 03 0s m ea su r ed in a p p lic at io n cir cu it ( a d- 03 - 00 03 08 ) o p t im iz ed f o r 28 v o p er at io n vdd=28 v, idq-0.13,pave=3.2w,1cwcdma, par=7.5 db gain eff aclr -45.00 - 42. 50 - 40. 00 - 37. 50 0 5 10 15 2. 45 2. 50 2. 55 2. 60 2. 65 2. 70 2. 75 a c l r ( d b c ) g a i n ( d b ) , d r a i n effi c i e n c y ( % ) frequency (ghz) gain aclr dr ain effciency 25 30 35 40 45 -20 -1 5 -1 0 -5 0 ef f i c i e n c y ( % ) a c l r ( d b c ) t y pi c a l d r a i n e f f i c i e nc y a nd a c l r v s o ut put p ow e r c g h v 27030s m easu r ed i n a p p l icat i o n c i r cu i t ( a d - 03- 00 030 8) o p t i m i z ed f o r 28 v o p er at i o n vdd=28v,idq=0.13 aclr_2p5 aclr_2p6 aclr_2p7 eff2p5 eff2p6 eff2p7 0 5 10 15 20 -4 5 -4 0 -3 5 -3 0 -2 5 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 ef f i c i e n c y ( % ) a c l r ( d b c ) pout (dbm) CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 source and load impedances for application circuit CGHV27030S-tb2 frequency (mhz) z source z load 2500 2.9 - j2.7 14.5 + j7.4 2600 3.1 - j2.9 13.8 + j7.3 2700 2.7 - j3.1 12.9+j7.6 note 1 : v d d = 28 v , i d q = 0.13 a in the dfn package. note 2 : impedances are extr acted from the CGHV27030S- tb2 application circuit and are not source and load pull data deriv ed from the tr ansistor CGHV27030S-tb2 bill of materials designator description qty r1, r2 res , 22.6, ohm, +/-1%, 1/16w , 0603 2 c1 cap , 3.0 pf , 0.1 pf , 0603, a t c 1 c2 cap , 0.9 pf , 0.05 pf , 0603, a t c 3 r3,r4,r5 res , 1/16w , 0603, 1%, 5.1% ohms 3 c3,c4 cap , 1.2 pf , +/-0.1 pf , 0603, a t c 2 c5, c11, c15 cap , 8.2 pf , 0.25 pf , 0603, a t c 3 c6, c16 cap , 470 pf , 5%, 100 v , 0603 2 c7, c17 cap , 33000 pf , 0805, 100 v , 0603, x7r 2 c18 cap , 1.0 uf , 100 v , 10%, x7r, 1210 1 c8 cap , 10 uf 16 v t ant alum 1 c19 cap , 33 uf , 20%, g ca se 1 j1, j2 conn, sma, p anel mount j ack 2 j3 header r t>plz .1cen lk 5 pos 1 pcb pcb , rogers 4350, er 3.66 1 q1 CGHV27030S, qfn 1 d z source z load g s CGHV27030S-tb2 application circuit CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 CGHV27030S-tb2 application circuit schematic, 28 v CGHV27030S-tb2 application circuit outline, 28 v CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 electrical characteristics when tested in CGHV27030S-tb3, 28 v, 1.8 - 2.2 ghz parameter 1.8 ghz 2.0 ghz 2.2 ghz units small signal gain 19 19 18 db adjacent channel p ower @ p out =3.2 w -37 -38 -39 dbc dr ain effciency @ p out = 3.2 w 35 35 33 % input r eturn loss 5 6 7 db note: measured in the CGHV27030S- tb2 application circuit. figure 7. - small signal gain and return losses vs frequency v dd = 28 v, i dq = 0.13 a -5 0 5 10 15 20 25 g a i n ( d b ) i n p u t a n d o u t p u t r e t u r n l o s s -2 5 -20 -1 5 -1 0 1 .5 1 .6 1 .7 1 .8 1 .9 2 .0 2 .1 2 .2 2 .3 2 .4 2 .5 i n p u t a n d o u t p u t r e t u r n l o s s frequency (ghz) s11 s21 s22 CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 typical performance in application circuit CGHV27030S-tb3 figure 8. - typical drain effciency and aclr vs. output power v dd = 28 v, i dq = 0.13 a, 1c wcdma, par = 7.5 db figure 9. - typical gain, drain effciency and aclr vs frequency v dd = 28 v, i dq = 0.13 a, p ave = 3.2 w, 1c wcd ma, par = 7.5 db 30 40 50 60 -3 0 -2 5 -2 0 -1 5 -1 0 -5 0 d r a i n ef f i c i e n c y ( % ) a c l r ( d b c ) aclr_1p8 aclr_2p0 aclr_2p2 de_1p8 de_2p0 de_2p2 0 10 20 -5 0 -4 5 -4 0 -3 5 20 22 24 26 28 30 32 34 36 38 d r a i n ef f i c i e n c y ( % ) output power (dbm) -35 -3 0 -2 5 -2 0 20 30 40 50 a c l r ( d b c) g a i n , d b & d r a i n ef f i c i e n c y ( % ) -4 5 -4 0 0 10 1 .8 1 .9 2 .0 2 .1 2 .2 g a i n , d b & d r a i n ef f i c i e n c y ( % ) fr e q ue n c y ( g hz ) d r a in e f f ic ie n c y ga in aclr gain aclr dr ain effciency CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
13 source and load impedances for application circuit CGHV27030S-tb3 frequency (mhz) z source z load 1800 6.16 - j3.5 21.9 + j6.5 2000 6.8 - j1.7 21 + j8.4 2200 5.5 - j2.0 20.8 + j11 note 1 : v d d = 28 v , i d q = 0.13 a in the dfn package. note 2 : impedances are extr acted from the CGHV27030S- tb3 application circuit and are not source and load pull data deriv ed from the tr ansistor CGHV27030S-tb3 bill of materials designator description qty r1 res , 10, ohm, +/-1%, 1/16w , 0603 1 r2 res , 120, ohm, +/-1%, 1/16w , 0603 1 l1 ind , 3.9 nh, +/-5%, 0603, johanson 1 c1 cap , 0.7 pf , +/-0.1 pf , 0603, a t c 1 c2 cap , 6.8 pf , +/-5%, 0603, a t c 1 c3 cap , 47pf , +/-0.1 pf , 0603, a t c 1 c4 cap , 1.5 pf , +/-0.1 pf , 0603, a t c 1 c5 cap , 2.7 pf , +/-0.1 pf , 0603, a t c 1 c6, c12 cap , 8.2 pf , +/-0.25 pf , 0603, a t c 2 c7, c13 cap , 470 pf , 5%, 100 v , 0603 2 c8, c14 cap , 33000 pf , 0805, x7r 2 c9 cap 10 uf 16 v t ant alum 1 c10 cap , 0.7 pf , +/-0.05 pf , 0603, a t c 1 c11 cap , 20 pf , +/-5%, 0603, a t c 1 c15 cap , 1.0 uf , 100v , 10%, x7r, 1210 1 c16 cap , 33 uf , 20%, g ca se 1 j1, j2 conn, sma, p anel mount j ack, flange, 4-hole, blunt post 2 pcb , ro4350, 0.020 thk 1 ba sepla te, cgh35015, 2.60 x 1.7 1 j3 header r t>plz .1cen lk 5pos 1 2-56 soc hd screw 1/4 s s 4 #2 split l ockw a sher s s 4 q1 CGHV27030S , qfn 1 d z source z load g s CGHV27030S-tb3 application circuit CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
14 CGHV27030S-tb3 application circuit schematic, 28 v CGHV27030S-tb3 application circuit outline, 28 v CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
15 electrical characteristics when tested in CGHV27030S-tb4, 50 v, 1.8 - 2.2 ghz parameter 1.8 ghz 2.0 ghz 2.2 ghz units small signal gain 22 22 21 db adjacent channel p ower @ p out =5 w -39 -38 -37 dbc dr ain effciency @ p out = 5 w 31 32 33 % input r eturn loss 5 7 6 db note: measured in the CGHV27030S- tb2 application circuit. figure 10. - small signal gain and return losses vs frequency v dd = 50 v, i dq = 0.13 a - 5 0 5 10 15 20 25 30 g a i n ( d b ) i n p u t a n d o u t p u t r e t u r n l o s s -25 -2 0 -1 5 -1 0 - 5 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 i n p u t a n d o u t p u t r e t u r n l o s s frequency (ghz) s11 s21 s22 CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
16 typical performance in application circuit CGHV27030S-tb4 figure 11. - typical drain effciency and aclr vs. output power v dd = 50 v, i dq = 0.13 a, 1c wcdma, par = 7.5 db figure 12. - typical gain, drain effciency and aclr vs frequency v dd = 50 v, i dq = 0.13 a, p ave = 5 w, 1c wcdma, par = 7.5 db gain aclr dr ain effciency 15 20 25 30 35 40 45 - 30 -25 -2 0 -1 5 -1 0 -5 0 d r a i n ef f i c i e n c y ( % ) a c l r ( d b c ) aclr_1p8 aclr_2p0 aclr_2p2 de_1p8 de_2p0 de_2p2 0 5 10 15 -45 -4 0 -3 5 - 30 20 22 24 26 28 30 32 34 36 38 d r a i n ef f i c i e n c y ( % ) output power (dbm) -35 -3 0 -2 5 -2 0 20 30 40 50 a c l r ( d b c) g a i n , d b & d r a i n ef f i c i e n c y ( % ) -4 5 -4 0 0 10 1 .8 1 .9 2 .0 2 .1 2 .2 g a i n , d b & d r a i n ef f i c i e n c y ( % ) fr e q ue n c y ( g hz ) d r a in e f f ic ie n c y ga in aclr gain aclr dr ain effciency CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
17 source and load impedances for application circuit CGHV27030S-tb4 frequency (mhz) z source z load 1800 5.0 - j3.3 20.0 + j18.6 2000 6.4 - j3.3 17.8 + j19.1 2200 4.0 - j2.7 16.2 + j20.8 note 1 : v d d = 50 v , i d q = 0.13 a in the dfn package. note 2 : impedances are extr acted from the CGHV27030S- tb4 application circuit and are not source and load pull data deriv ed from the tr ansistor CGHV27030S-tb4 bill of materials designator description qty r1 res , 220, ohm, +/-1%, 1/16w , 0603 1 r2 res , 10, ohm, +/-1%, 1/16w , 0603 1 l1 ind , 3.3 nh, +/-5%, 0603, johanson 1 c1 cap , 3.3 pf , +/-0.1 pf , 0603, a t c 1 c2, c5, c10, c11 cap , 8.2 pf , +/-5%, 0603, a t c 1 c3, c4 cap , 0.6 pf , +/-0.1 pf , 0603, a t c 2 c6, c12 cap , 470 pf , 5%, 100v , 0603, x 2 c7, c13 cap , 33000 pf , 0805, 100v . x7r 2 c8 cap 10 uf 16 v t ant alum 1 c9 cap , 1.0 pf , +/-0.1 pf , 0603, a t c 1 c14 cap , 1.0 uf , 100v , 10%, x7r, 1210 1 c15 cap , 33 uf , 20%, g ca se 1 j1, j2 conn, sma, p anel mount j ack, flange, 4-hole, blunt post 2 pcb pcb , ro4350, 0.020 thk 1 j3 header r t>plz .1cen lk 5pos 1 q1 CGHV27030S , qfn 1 d z source z load g s CGHV27030S-tb4 application circuit CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
18 CGHV27030S-tb4 application circuit schematic, 50 v CGHV27030S-tb4 application circuit outline, 50 v CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
19 electrical characteristics when tested in CGHV27030S-tb5, 50 v, 1.2 - 1.4 ghz parameter 1.2 ghz 1.3 ghz 1.4 ghz units output p ower @ p in = 27 dbm 35.5 33.5 32.5 w gain @ p in = 27 dbm 18.5 18.25 18.1 db dr ain effciency @ p in = 27 dbm 71 67 65 % note: measured in the CGHV27030S- tb2 application circuit. figure 13. - small signal gain and return losses vs frequency v dd = 50 v, i dq = 0.125 a - 5 0 5 10 15 20 25 30 g a i n ( d b ) , i n p u t a n d o u t p u t r e t u r n l o s s ( d b ) s mal l s i g n al g ai n an d r et u r n l o ss v s. f r eq u en cy vdd = 50 v, idq = 0.125 a -30 -2 5 -2 0 -1 5 -1 0 - 5 0 .8 0 .9 1 1 .1 1 .2 1 .3 1 .4 1 .5 1.6 g a i n ( d b ) , i n p u t a n d o u t p u t r e t u r n l o s s ( d b ) frequency (ghz) s(2,1) s(1,1) s(2,2) CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
20 typical performance in application circuit CGHV27030S-tb5 figure 14. - typical output power and drain effciency input power v dd = 50 v, i dq = 0.125 a, pulse width = 100 u s, duty cycle = 10 % figure 15. - typical output power, gain, and drain effciency vs frequency v dd = 50 v, i dq = 0.125 a, p in = 27 dbm, pulse width = 100 us, duty cycle = 10 % gain aclr dr ain effciency 50 60 70 80 35 40 45 50 d r a i n ef f i c i e n c y ( % ) o u t p u t po w e r ( d b m) t y p i c a l o u t pu t p o w e r a n d d r a i n e f f ic i e n c y v s . o u t pu t p o w e r vdd = 50 v, idq = 0.125 a, pulse width = 100 us, duty cycle = 10 % output power - 1.2 ghz output power - 1.3 ghz 20 30 40 20 25 30 13 15 17 19 21 23 25 27 29 d r a i n ef f i c i e n c y ( % ) o u t p u t po w e r ( d b m) input power (dbm) output power - 1.3 ghz output power - 1.4 ghz drain efficiency - 1.2 ghz drain efficiency - 1.3 ghz drain efficiency - 1.4 ghz 40 50 60 70 80 90 o u t p u t po w e r ( w ) , g a i n ( d b ) a n d d r a i n ef f i c i e n c y ( % ) c g h v 27030s - t b 5 r f m e asu r em en t s v s f r eq u en cy at p i n = 27 d b m vdd = 50 v, idq = 0.125 a, pulse width = 100 us, duty cycle = 10 % output power gain drain efficiency 0 10 20 30 1. 05 1. 10 1. 15 1. 20 1. 25 1. 30 1. 35 1. 40 1. 45 1. 50 1. 55 o u t p u t po w e r ( w ) , g a i n ( d b ) a n d d r a i n ef f i c i e n c y ( % ) frequency (ghz) drain effciency gain output power CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
21 source and load impedances for application circuit CGHV27030S-tb5 frequency (mhz) z source z load 1200 8.6 - j5.4 25.4 - j29.2 1300 8.7 - j5.1 27.6 - j30.5 1400 7.4 - j5.2 30.1 - j31.8 note 1 : v d d = 50 v , i d q = 0.125 a in the dfn package. note 2 : impedances are extr acted from the CGHV27030S- tb5 application circuit and are not source and load pull data deriv ed from the tr ansistor CGHV27030S-tb5 bill of materials designator description qty r1 res , 2.2, ohm, 1/10w 5% 0603 smd 1 r2 res , 1/16w , 0603, 1%, 14.7 ohms 1 c1 cap , 2.2 pf , +/-0.1 pf , 0603, a t c 1 c2, c3 cap , 3.9 pf , +/-0.1 pf , 0603, a t c 2 c4 cap , 1.2 pf , +/-0.1 pf , 0603, a t c 1 c5 cap , 24 pf , +/-5%, 0603, a t c 1 c6, c12 cap , 470 pf , 5%, 100v , 0603, x 2 c7, c13 cap , 33000 pf , 0805, 100v , z7r 2 c8, c14 cap , 1.0 uf , 100v , 10%, x7r, 1210 2 c9 cap , 43 pf , +/-5%, 0603, a t c 1 c10 cap , 4.7 pf , +/-0.1 pf , 0603, a t c600s 1 c11 cap , 100.0 pf , +/-5%, 0603, a t c 1 c15 cap , 33 uf , 20%, g ca se j1, j2 conn, sma, p anel mount j ack, flange, 4-hole, blunt post 2 pcb pcb , ro4350, l -band , 1.7 x 2.6 1 j3 header r t>plz .1cen lk 5pos 1 q1 CGHV27030S , qfn 1 d z source z load g s CGHV27030S-tb5 application circuit CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
22 CGHV27030S-tb5 application circuit schematic, 50 v CGHV27030S-tb5 application circuit outline, 50 v CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
23 CGHV27030S power dissipation de-rating curve figure 16. - CGHV27030S power dissipation de-rating curve note 1. area ex ceeds maximum case t emper ature (see p age 2). 8 10 12 14 16 po w e r d i s s i p a t i o n ( w ) CGHV27030S power dissipation de-rating curve 0 2 4 6 0 25 50 75 100 125 150 175 200 225 250 po w e r d i s s i p a t i o n ( w ) maximum temperature ( c) note 1 CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
24 product dimensions CGHV27030S (package 3 x 4 dfn) pin input/output 1 gnd 2 nc 3 rf in 4 rf in 5 nc 6 gnd 7 gnd 8 nc 9 rf out 10 rf out 11 nc 12 gnd CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
25 part number system parameter value units upper frequency 1 2.7 ghz p ower output 30 w package surface mount - table 1. note 1 : alpha char acters used in frequency code indicate a v alue greater than 9.9 ghz. see t able 2 for v alue. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. p ack age p o w er o utput ( w ) upper f r equenc y ( ghz) c r ee g an high v oltage CGHV27030S CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
26 disclaimer specifcations are subject to change without notice. cree, inc. believ es the information contained within this data sheet to be accur ate and reliable. howev er , no responsibilit y is assumed b y cree for an y infringement of patents or other rights of third parties which ma y result from its use. no license is gr anted b y implication or otherwise under an y patent or patent rights of cree. cree mak es no w arr ant y , representation or guar antee regarding the suitabilit y of its products for an y particular purpose. t ypical par ameters are the a v er age v alues expected b y cree in large quantities and are pro vided for information purposes only . these v alues can and do v ary in different applications and actual performance can v ary o v er time. all oper ating par ameters should be v alidated b y customer s technical experts for each application. cree products are not designed, intended or authoriz ed for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in perso nal injury or death or in applications for planning, construction, maintenance or direct oper ation of a nuclear facilit y . f or more information, please contact: cree, inc. 4600 silicon driv e durham, north carolina, us a 27703 www .cree.com/rf sar ah miller mark eting cree, rf components 1.919.407.5302 r y an bak er mark eting cree, rf components 1.919.407.7816 t om dekk er sales director cree, rf components 1.919.313.5639 CGHV27030S rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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